US Patent Issued to SHIN-ETSU HANDOTAI, SHIN-ETSU CHEMICAL on Nov. 3 for "Epitaxial wafer for ultraviolet light emitting device, method for producing metal bonded substrate for ultraviolet light emitting device, method for producing ultraviolet light emitting device, and method for producing ultraviolet light emitting device array" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,492, issued on Nov. 3, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo) and SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Epitaxial wafer for ultraviolet light emitting device, method for producing metal bonded substrate for ultraviolet light emitting device, method for producing ultraviolet light emitting device, and method for producing ultraviolet light emitting device array" was invented by Masato Yamada (Chiyoda-ku, Japan), Junya Ishizaki (Takasaki, Japan), Keitaro Tsuchiya (Takasaki, Japan), Yoshihiro Kubota (Annaka, Japan) and Minoru Kawahara (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial wafer for an ultraviolet light ...