ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,775,211, issued on Oct. 27, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).
"Positive resist material and patterning process" was invented by Jun Hatakeyama (Joetsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a positive resist material containing a compound having two or more urethane groups and having a carboxyl group and a sulfonium salt or iodonium salt of a carboxylic acid, the carboxyl group being substituted with an acid-labile group and being bonded to a first urethane group via a first linking group, and the sulfonium salt or iodonium salt being bonded to a second urethane group directly or via a second li...