US Patent Issued to SHIN-ETSU CHEMICAL on March 31 for "Semiconductor laminate, semiconductor device, and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,625, issued on March 31, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Semiconductor laminate, semiconductor device, and method for manufacturing semiconductor device" was invented by Hiroshi Hashigami (Annaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laminate at least including: a base; a buffer layer; and a crystalline metal oxide semiconductor film containing at least one metal element and having a corundum structure, the semiconductor laminate having the buffer layer on a main surface of the base directly or via another layer, the semiconductor laminate having the crystalline metal oxide semiconductor film on...