US Patent Issued to SHIN-ETSU CHEMICAL on April 14 for "Method for producing a gallium oxide semiconductor film and a film forming apparatus" (Japanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,054, issued on April 14, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Method for producing a gallium oxide semiconductor film and a film forming apparatus" was invented by Takenori Watabe (Annaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a gallium oxide semiconductor film by a mist CVD method, including, a mist-forming step in which a raw material solution containing gallium is misted in a mist-forming unit to generate mist, a carrier gas supply step of supplying a carrier gas for transferring the mist to the mist-forming unit, a transferring step of transferring the mist from the mist-forming unit to a f...