US Patent Issued to Shenzhen Rubeust Technology on Nov. 3 for "Epitaxial structure and semiconductor chip applying same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,785,358, issued on Nov. 3, was assigned to Shenzhen Rubeust Technology Ltd. (Shenzhen, China).

"Epitaxial structure and semiconductor chip applying same" was invented by Chao-chen Cheng (Guangdong, China), Xinqi Ding (Guangdong, China) and Ching-ming Tu (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are an epitaxial structure and a semiconductor chip applying same. The epitaxial structure comprises a quantum well structure, a P-type contact layer, and an electrode layer, which are stacked in sequence; the P-type contact layer comprises a first step part and a second step part that are disposed in a step shape, the second step p...