US Patent Issued to SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY on May 19 for "Shape memory material with chelating system and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,629,447, issued on May 19, was assigned to SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY (Shenzhen, China).

"Shape memory material with chelating system and preparation method thereof" was invented by Yuxiao Lai (Shenzhen, China), Yuanchi Zhang (Shenzhen, China) and Wei Zhang (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a shape memory material with a chelating system. The shape memory material with the chelating system comprises polyurethane and a metal complex in a mass ratio of 100:(1-10), and the polyurethane is obtained by reaction of the following components by weight percent: 9.0-10.0% of methylenediph...