US Patent Issued to SHANXI CHINA CRYSTAL TECHNOLOGIES on Feb. 24 for "Semi-insulating gallium arsenide single crystal, preparation method and growth device therefor" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,856, issued on Feb. 24, was assigned to SHANXI CHINA CRYSTAL TECHNOLOGIES Co. LTD. (Shanxi, China).

"Semi-insulating gallium arsenide single crystal, preparation method and growth device therefor" was invented by Youjun Gao (Shanxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semi-insulating gallium arsenide single crystal preparation method includes: adding crystal material to a PBN crucible; adding graphite in a quartz cap; loading the hermetically connected quartz cap and quartz crucible into a VGF single crystal furnace in different temperature zones; controlling the temperature zone in which the quartz crucible is located at a temper...