US Patent Issued to SHANGHAITECH UNIVERSITY on Sept. 9 for "Ultra-low-voltage static random access memory (SRAM) cell for eliminating half-select disturbance under bit interleaving structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,624, issued on Sept. 9, was assigned to SHANGHAITECH UNIVERSITY (Shanghai).

"Ultra-low-voltage static random access memory (SRAM) cell for eliminating half-select disturbance under bit interleaving structure" was invented by Yajun Ha (Shanghai), Yifei Li (Shanghai), Jian Chen (Shanghai) and Hongyu Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ultra-low-voltage static random access memory (SRAM) cell for eliminating half-select-disturbance under a bit interleaving structure includes a cross-coupled inverter pair, two N-type write transistors NM1 and NM2, two P-type write transistors PM1 and PM2, and two N-type transistors NM3 and ...