US Patent Issued to SHANGHAITECH UNIVERSITY on Dec. 16 for "Dual-six-transistor (D6T) in-memory computing (IMC) accelerator supporting always-linear discharge and reducing digital steps" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,936, issued on Dec. 16, was assigned to SHANGHAITECH UNIVERSITY (Shanghai).

"Dual-six-transistor (D6T) in-memory computing (IMC) accelerator supporting always-linear discharge and reducing digital steps" was invented by Yajun Ha (Shanghai), Hongtu Zhang (Shanghai) and Yuhao Shu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dual-six-transistor (D6T) in-memory computing (IMC) accelerator supporting always-linear discharge and reducing digital steps is provided. In the IMC accelerator, three effective techniques are proposed: (1) A D6T bitcell can reliably run at 0.4 V and enter a standby mode at 0.26 V, to support parallel processing of d...