US Patent Issued to Shanghai Supersemiconductor Technology on June 3 for "Ultra-thin super junction IGBT device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,173, issued on June 3, was assigned to Shanghai Supersemiconductor Technology Co. Ltd. (Shanghai).

"Ultra-thin super junction IGBT device and manufacturing method thereof" was invented by Yuzhou Wu (Shanghai) and Jiuying Yu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses an ultra-thin super junction IGBT and a manufacturing method thereof, comprising: a metalized collector; a P-type collector region located on the metalized collector; an N-type FS layer located above the P-type collector region; an N-type FS isolating layer located above the N-type FS layer; a first N-type epitaxial layer located above the N-t...