US Patent Issued to SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER, SHANGHAI IC R&D CENTER on Dec. 16 for "RRAM cell structure and fabrication method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,627, issued on Dec. 16, was assigned to SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER Co. LTD. (Shanghai) and SHANGHAI IC R&D CENTER Co. LTD. (Shanghai).

"RRAM cell structure and fabrication method therefor" was invented by Ao Guo (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention disclosures a RRAM cell structure, comprising a first transistor and a second transistor which are connected in parallel and commonly connected to a resistive switching device; wherein, the first transistor is set with a first gate, a first source and a first drain, a first control signal is applied to the first ga...