US Patent Issued to Shanghai Huali Microelectronics on March 17 for "Method for manufacturing SONOS memory" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,680, issued on March 17, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai).

"Method for manufacturing SONOS memory" was invented by Tianquan Shi (Shanghai), Zhenghong Liu (Shanghai), Ruisheng Qi (Shanghai) and Haoyu Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a SONOS memory discloses forming first a thin oxide layer as a sidewall protection layer and a blocking layer. This layer prevents the high dielectric-constant layer at the bottom of the stacked gate structure from being exposed on the surface. An lightly doped drain (LDD) implantation area is defined by a lateral thickness of a thin ...