US Patent Issued to Shanghai Huali Microelectronics on Aug. 4 for "Silicon photomultiplier tube" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,796, issued on Aug. 4, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai).

"Silicon photomultiplier tube" was invented by Zhao Guo (Shanghai), Chengdong Liang (Shanghai) and Liangliang He (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application discloses a unit structure of a silicon photomultiplier tube, including a first conductive type heavily doped first electrode region located on a first side of the shallow trench isolation, a second conductive type heavily doped second electrode region located on a second side, and a quenching resistor located on a top surface of the shallow trench isolation. A photosensitive lay...