US Patent Issued to Shanghai Huali Integrated Circuit on Sept. 1 for "Method for adjusting local thickness of photoresist" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,724,348, issued on Sept. 1, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for adjusting local thickness of photoresist" was invented by Dongyu Xu (Shanghai), Zhihong Wang (Shanghai), Hongwen Zhao (Shanghai) and Wenzhan Zhou (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for adjusting the local thickness of a photoresist, and a semiconductor front layer structure. The thickness of the photoresist layer in a first region of the stack structure is more than the thickness of the photoresist layer in a second region. The photomask is configured to include an auxiliary pattern f...