ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,449, issued on March 24, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).
"Semiconductor fin structure cut process" was invented by Yanzhan Qiu (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to a semiconductor fin structure cut process. The process includes: providing a semiconductor substrate and forming a plurality of fin structures on the semiconductor substrate, a gap being formed between every two adjacent fin structures; depositing a first dielectric layer, the first dielectric layer being filled in the gaps so that all fin structures are connected into a whole to form a semiconduct...