US Patent Issued to Shanghai Huali Integrated Circuit on March 17 for "Method for manufacturing source/drain epitaxial layer of FDSOI MOSFET" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,724, issued on March 17, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing source/drain epitaxial layer of FDSOI MOSFET" was invented by Jiaqi Hong (Shanghai), Jun Tan (Shanghai) and Qiang Yan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing a source/drain epitaxial layer of an FDSOI MOSFET, comprising: step 1, forming a shallow trench isolation on an FDSOI substrate; step 2, opening a formation region of a source/drain region of the MOSFET; step 3, performing first epitaxial growth to form a first pure silicon epitaxial layer; step 4, p...