US Patent Issued to Shanghai Huali Integrated Circuit on March 17 for "Method for correcting capacitance measurement value under high leakage current" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,578,410, issued on March 17, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for correcting capacitance measurement value under high leakage current" was invented by Xiaoming Liu (Shanghai) and Liujiang Yu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a parallel binary model for measuring a capacitance value of a gate oxide layer of a gate oxide MOS device. The parallel binary model is a parallel circuit model formed through parallel connection of a parallel capacitor Cp and an equivalent resistor Rp. The parallel binary model is used to measure the gate oxide MOS device through an L...