US Patent Issued to Shanghai Huali Integrated Circuit on Feb. 10 for "Test method for improving IO device yield" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,546,810, issued on Feb. 10, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Test method for improving IO device yield" was invented by Jiacheng Wen (Shanghai), Zhi Tian (Shanghai) and Tao Liu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a device leakage current test method. The method includes: applying a gradually increasing first gate voltage within a range to a gate of the MOS transistor; applying a first drain voltage to a drain of the MOS transistor; reapplying a gradually increasing second gate voltage within a range to the gate of the MOS transistor; reapplying a second drain volt...