US Patent Issued to Shanghai Huali Integrated Circuit on Dec. 23 for "MV device and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,460, issued on Dec. 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"MV device and method for manufacturing same" was invented by Qiwei Wang (Shanghai), Tao Liu (Shanghai), Zhigang Zhang (Shanghai), Yaoyu Zhan (Shanghai) and Haoyu Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses an MV device, wherein a first gate structure of the MV device is formed by stacking a first gate dielectric layer and a first gate conductive material layer. The first gate dielectric layer is divided into a body gate dielectric layer and an edge gate dielectric layer. The body gate dielectric layer is lo...