US Patent Issued to Shanghai Huahong Grace Semiconductor Manufacturing on Sept. 9 for "Embedded SONOS memory and method of making the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,300, issued on Sept. 9, was assigned to Shanghai Huahong Grace Semiconductor Manufacturing Corp. (Shanghai).

"Embedded SONOS memory and method of making the same" was invented by Ning Wang (Shanghai) and Kegang Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embedded SONOS memory and a method for making the same. The method includes: forming a connecting layer on one side of a selection transistor polysilicon gate; forming a second silicon oxide layer and an ONO charge storage layer on the other side of the selection transistor polysilicon gate far away from the connecting layer; then forming a memory transistor polysilicon gate o...