US Patent Issued to Shanghai Huahong Grace Semiconductor Manufacturing on May 12 for "Photolithographic exposure method for memory" (Chinese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,340, issued on May 12, was assigned to Shanghai Huahong Grace Semiconductor Manufacturing Corp. (Shanghai).

"Photolithographic exposure method for memory" was invented by Lei Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photolithographic exposure method for a memory. In a photolithographic process for making a memory, when exposure is performed by using a mask, regions with different exposure dimension requirements on the memory are divided into different exposure groups. Regions with the same exposure resolution requirement are divided into the same group. Different exposure modes of exposure that are capable of correspondingly sa...