US Patent Issued to SGL CARBON on June 16 for "Refractory carbide layer" (Swedish, German Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,655,519, issued on June 16, was assigned to SGL CARBON SE (Wiesbaden, Germany).

"Refractory carbide layer" was invented by Charles Wijayawardhana (Meitingen, Germany), Christian Militzer (Meitingen, Germany), Jing-Jia Huang (Meitingen, Germany), Urban Forsberg (Sturefors, Sweden) and Henrik Pedersen (Stigtomta, Sweden).

According to the abstract* released by the U.S. Patent & Trademark Office: "A chemical vapor deposition (CVD) method for preparing a layer comprising refractory carbide crystals, in particular silicon carbide crystals. At least a portion of the layer is formed from a gas mixture containing a silicon source and an aromatic carbon source. The molar C/Si ratio in the gas...