ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,776, issued on March 17, was assigned to Seoul Viosys Co. Ltd. (Ansan-si, South Korea).

"Light emitting diode with high luminous efficiency" was invented by Joon Hee Lee (Ansan-si, South Korea) and Mi Hee Lee (Ansan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode including a light emitting structure including first and second conductive type semiconductor layers and an active layer, first openings and second openings formed through the light emitting structure to expose the first conductive type semiconductor layer, a metal layer electrically connected to the second conductive type semiconductor layer, an elect...