US Patent Issued to Seoul National University R&DB foundation on Sept. 15 for "Capacitorless 3D stacked DRAM device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,040, issued on Sept. 15, was assigned to Seoul National University R&DB foundation (Seoul, South Korea).

"Capacitorless 3D stacked DRAM device and manufacturing method thereof" was invented by Cheol Seong Hwang (Seoul, South Korea), Seo Young Jang (Gyeonggi-do, South Korea) and Han Chul Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a capacitorless three-dimensional stacked DRAM device including a plurality of memory cell structures spaced apart from each other in horizontal and vertical directions, each of the plurality of memory cell structures including a horizontal read transistor s...