US Patent Issued to Seoul National University R&DB foundation on March 31 for "Vertically stacked memory device and manufacturing method thereof" (South Korean Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,436, issued on March 31, was assigned to Seoul National University R&DB foundation (Seoul, South Korea).

"Vertically stacked memory device and manufacturing method thereof" was invented by Cheol Seong Hwang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a vertical stack-type memory device may including a word line extending in a horizontal direction and having a vertical through-hole region, a vertical bit line arranged vertically to pass through the through-hole region, a channel layer pattern arranged to surround the vertical bit line inside the through-hole region, a body insulating layer disp...