US Patent Issued to Sensor Electronic Technology on May 13 for "Heterostructure including a semiconductor layer with graded composition" (South Carolina, Virginia Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,758, issued on May 13, was assigned to Sensor Electronic Technology Inc. (Columbia, S.C.).

"Heterostructure including a semiconductor layer with graded composition" was invented by Rakesh Jain (Columbia, S.C.), Maxim S. Shatalov (Columbia, S.C.), Alexander Dobrinsky (Vienna, Va.) and Michael Shur (Vienna, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. ...