US Patent Issued to SENIC on June 3 for "Silicon carbide wafer and method of preparing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,320,033, issued on June 3, was assigned to SENIC INC. (Cheonan-si, South Korea).

"Silicon carbide wafer and method of preparing the same" was invented by Jong Hwi Park (Suwon-si, South Korea), Kap-Ryeol Ku (Suwon-si, South Korea), Jung Woo Choi (Suwon-si, South Korea), Byung Kyu Jang (Suwon-si, South Korea), Myung-Ok Kyun (Suwon-si, South Korea), Jung-Gyu Kim (Suwon-si, South Korea) and Jung Doo Seo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temp...