US Patent Issued to Semiconductor Manufacturing International (Tianjin), Semiconductor Manufacturing International (Shanghai) on May 19 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,512, issued on May 19, was assigned to Semiconductor Manufacturing International (Tianjin) Corp. (Tianjin, China) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and fabrication method thereof" was invented by Ya Ding (Tianjin, China), Jinsong Wang (Tianjin, China), Linhong Yang (Tianjin, China), Yanhong Zhang (Tianjin, China), Yichen Du (Tianjin, China) and Qiuying Chen (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first electrode plate over the substrate, a second electrode plate over the first electrode plate, and a sidewall struc...