US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Oct. 27 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,665, issued on Oct. 27, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and fabrication method thereof" was invented by Jisong Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate that includes a first region, a second region, and a third region; a first electrode layer disposed over the first region and the second region; a first dielectric layer disposed over the substrate; a second electrode layer disposed on the first dielectric layer over the third region and the second region; a second dielectric layer disposed over the substr...