US Patent Issued to Semiconductor Manufacturing International (Shanghai) on July 7 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,434, issued on July 7, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and fabrication method thereof" was invented by Poren Tang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and its fabrication method are provided. The semiconductor structure includes: a substrate, composite layers, a gate structure crossing the composite layers; inner spacers, source/drain layers, and insulating layers. Each composite layer includes channel layers, first openings between the channel layers and the substrate, and second openings between adjacent channel layers. The ...