US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Jan. 27 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,546, issued on Jan. 27, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and forming method thereof" was invented by Shiliang Ji (Shanghai), Zhenyang Zhao (Shanghai) and Cheng Tan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; channel structures on the substrate, a channel structure of the channel structures including a plurality of channel layers stacked along a direction perpendicular to a surface of the substrate and a plurality of gate grooves between adjacent channel layers; gate structures spanning the channel structure, th...