US Patent Issued to Semiconductor Manufacturing International (Shanghai) on April 21 for "Semiconductor structure and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,566, issued on April 21, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and method of forming the same" was invented by Xiaodong Wang (Shanghai), Fei Tang (Shanghai), Weihong Qian (Shanghai) and Xining Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate. The substrate includes a shielding region and a device region. The shielding region includes a first active region parallel to a first direction. The device region includes a second active region parallel to the first direction. The semiconductor structure also includes first is...