US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on June 23 for "Semiconductor structure facilitating prevention of a parasitic device and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,644, issued on June 23, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure facilitating prevention of a parasitic device and method for forming same" was invented by Jisong Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same are provided. One form of a method includes: forming a source/drain groove in the channel structure on two sides of a gate structure; forming a sacrificial epitaxial layer on a bottom of the source/drain groove; forming, on the sa...