US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on July 14 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,820, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and fabrication method thereof" was invented by Bo Su (Shanghai), Hanzhu Wu (Shanghai), Abraham Yoo (Shanghai) and Haiyang Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and its fabrication method. First sacrificial layers are formed on a base substrate. Channel structures are formed on the first sacrificial layers. Each channel structure includes stacked channel stack layer(s). Each channel stack layer ...