ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,461, issued on Nov. 3, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Image sensor and formation method thereof" was invented by Zhanjie Lu (Beijing) and Zhigao Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor and a formation method of the image sensor are provided in the present disclosure. The method includes forming an array substrate, where a photosensitive device is in the array substrate; forming an interconnection structural layer on the array substrate; forming a passivation structural layer on the inter...