US Patent Issued to Semiconductor Manufacturing International (Beijing), Semiconductor Manufacturing International (Shanghai) on July 7 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,430, issued on July 7, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and forming method thereof" was invented by Hailong Yu (Shanghai), Bo Su (Shanghai) and Hansu Oh (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and forming method thereof are provided. The forming method includes: providing a substrate; forming a plurality of initial composite layers on a portion of the substrate; forming a plurality of source and drain layers on surfaces of the plurality of channel layers exposed...