US Patent Issued to Semiconductor Manufacturing International (Beijing), Semiconductor Manufacturing International (Shanghai) on Feb. 10 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,367, issued on Feb. 10, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and method for forming same" was invented by Ye Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming same. The structure includes: a base substrate; a gate structure, located on the base substrate; a drift region, located in the base substrate on one side of the gate structure; a body region, located in the base substrate on the other side of the gate structure; a drain region, located i...