ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,182, issued on Oct. 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Takahiko Ishizu (Kanagawa, Japan), Kazuma Furutani (Kanagawa, Japan) and Takayuki Ikeda (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a novel structure is provided. The semiconductor device includes a memory circuit including a first transistor and a second transistor. The first transistor is formed on a silicon substrate. The second transistor is formed in a layer above a layer where the first transistor is provided. The first transistor includes a first gate electrode...