US Patent Issued to Semiconductor Energy Laboratory on May 19 for "Manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,485, issued on May 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Manufacturing method of semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Shunichi Ito (Atsugi, Japan), Yoshihiro Komatsu (Ebina, Japan), Shinobu Kawaguchi (Isehara, Japan) and Shinya Sasagawa (Chigasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an ...