US Patent Issued to Semiconductor Energy Laboratory on May 13 for "Method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,645, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for manufacturing semiconductor device" was invented by Toshinari Sasaki (Atsugi, Japan), Junichiro Sakata (Atsugi, Japan), Hiroki Ohara (Sagamihara, Japan) and Shunpei Yamazaki (Setagaya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device ...