ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,509, issued on March 31, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Transistor and method for manufacturing the same" was invented by Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a highly reliable transistor. In a bottom-gate transistor including an oxide semiconductor layer as a semiconductor layer where a channel is formed, an insulating layer containing excess oxygen is formed over the oxide semiconductor layer, and then an insulating layer through which impurities do not easily pass is formed without exposure to the air. As the insulating layer through which impur...