US Patent Issued to Semiconductor Energy Laboratory on March 31 for "Semiconductor device including layer comprising memory cell" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,432, issued on March 31, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device including layer comprising memory cell" was invented by Tatsuya Onuki (Atsugi, Japan), Yuto Yakubo (Atsugi, Japan) and Seiya Saito (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A novel semiconductor device is provided. The semiconductor device includes a driver circuit and a first transistor layer to a third transistor layer. The first transistor layer includes a first memory cell including a first transistor and a first capacitor. The second transistor layer includes a second memory cell including a second transi...