ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,655, issued on March 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or ...