US Patent Issued to Semiconductor Energy Laboratory on March 17 for "Manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,747, issued on March 17, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Manufacturing method of semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Toshiya Endo (Atsugi, Japan) and Ryota Hodo (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To manufacture a semiconductor device by a method including the steps of: forming an oxide over a substrate, a first conductor over the oxide, and a second conductor over the first conductor; forming a first insulator to cover the oxide, the first conductor, and the second conductor; forming an opening in the first insulator to divide the second cond...