ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,313, issued on June 30, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Semiconductor device and manufacturing method of the semiconductor device" was invented by Shunpei Yamazaki (Tokyo) and Tetsuya Kakehata (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with a high on-state current and a semiconductor device with high productivity are provided. A first insulator; a second insulator over the first insulator; a third insulator and a first conductor over the second insulator; a fourth insulator over the third insulator and the first conductor; a fifth insulator over the fourth insulator; a first oxide o...