ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,446, issued on July 7, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device and manufacturing method of the same" was invented by Satoshi Toriumi (Ebina, Japan), Takashi Hamada (Atsugi, Japan), Tetsunori Maruyama (Atsugi, Japan), Yuki Imoto (Sagamihara, Japan), Yuji Asano (Atsugi, Japan), Ryunosuke Honda (Atsugi, Japan) and Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulato...