ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,880, issued on July 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Setagaya, Japan), Yoshihiro Komatsu (Ebina, Japan), Yasumasa Yamane (Atsugi, Japan), Shuhei Nagatsuka (Atsugi, Japan), Takashi Hamada (Atsugi, Japan) and Hiroki Komagata (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are de...