US Patent Issued to Semiconductor Energy Laboratory on Jan. 27 for "Semiconductor device, capacitor, and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,495, issued on Jan. 27, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device, capacitor, and manufacturing method thereof" was invented by Shunpei Yamazaki (Tokyo), Yasuhiro Jinbo (Kanagawa, Japan), Hitoshi Kunitake (Kanagawa, Japan), Haruyuki Baba (Kanagawa, Japan), Yuki Ito (Aichi, Japan), Fumito Isaka (Kanagawa, Japan), Kazuki Tanemura (Kanagawa, Japan), Yasumasa Yamane (Kanagawa, Japan) and Tatsuya Onuki (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferr...