US Patent Issued to Semiconductor Energy Laboratory on Feb. 24 for "Method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,843, issued on Feb. 24, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Masami Jintyou (Tochigi, Japan) and Yukinori Shima (Gunma, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conduct...