US Patent Issued to Semiconductor Energy Laboratory on Feb. 10 for "Metal oxide, method for forming metal oxide, and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,395, issued on Feb. 10, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Metal oxide, method for forming metal oxide, and semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan) and Tomonori Nakayama (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A novel metal oxide and a formation method thereof are provided. The metal oxide includes a first crystal, a second crystal, and a region positioned between the first crystal and the second crystal. The c-axis of the first crystal is substantially parallel to the c-axis of the second crystal. The crystallinity of the region is lower than those of the...